BCR533 NPN Silicon Digital Transistor • Built in bias resistor (R = 10 kΩ, R = 10 kΩ) 1 2 3 2 • Pb-free (RoHS compliant) package 1 • Qualified according AEC Q101 C 3 R1 R2 1 2 B E EHA07184 Type Marking Pin Configuration Package BCR533 XCs 1=B 2=E 3=C SOT23 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage V 50 V CEO Collector-base voltage V 50 CBO Input forward voltage V 50 i(fwd) Input reverse voltage V 10 i(rev) Collector current I 500 mA C Total power dissipation- P 330 mW tot T ≤ 79 °C S Junction temperature T 150 °C j Storage temperature T -65 ... 150 stg Thermal Resistance Parameter Symbol Value Unit Junction - soldering point1) R ≤ 215 K/W thJS 1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation) 1 2011-10-06

BCR533 Electrical Characteristics at T = 25°C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage V 50 - - V (BR)CEO I = 100 µA, I = 0 C B Collector-base breakdown voltage V 50 - - (BR)CBO I = 10 µA, I = 0 C E Collector-base cutoff current I - - 100 nA CBO V = 50 V, I = 0 CB E Emitter-base cutoff current I - - 0.75 mA EBO V = 10 V, I = 0 EB C DC current gain- h 70 - - - FE I = 50 mA, V = 5 V C CE Collector-emitter saturation voltage1) V - - 0.3 V CEsat I = 50 mA, I = 2.5 mA C B Input off voltage V 0.6 - 1.5 i(off) I = 100 µA, V = 5 V C CE Input on voltage V 1 - 2.5 i(on) I = 10 mA, V = 0.3 V C CE Input resistor R 7 10 13 kΩ 1 Resistor ratio R /R 0.9 1 1.1 - 1 2 AC Characteristics Transition frequency f - 100 - MHz T I = 50 mA, V = 5 V, f = 100 MHz C CE 1Pulse test: t < 300µs; D < 2% 2 2011-10-06

BCR533 DC current gain h = ƒ(I ) Collector-emitter saturation voltage FE C V = 5 V (common emitter configuration) V = ƒ(I ), h = 20 CE CEsat C FE 10 3 0.5 V -40 °C 0.4 -25 °C 25 °C 0.35 10 2 85 °C E F 125 °C C h I 0.3 0.25 0.2 -40 °C 10 1 -25 °C 0.15 25 °C 85 °C 125 °C 0.1 0.05 10 01 0 -4 10 -3 10 -2 10 -1 A 10 0 01 0 -3 10 -2 10 -1 A 10 0 I V C CEsat Input on Voltage Vi(on) = ƒ(IC) Input off voltage Vi(off) = ƒ(IC) V = 0.3V (common emitter configuration) V = 5V (common emitter configuration) CE CE 10 2 10 1 V -40 °C -25 °C V 25 °C 85 °C 125 °C n) 10 1 -40 °C Vi(o -2255 ° °CC Vi(off) 85 °C 125 °C 10 0 10 0 10 -1 10 -1 10 -4 10 -3 10 -2 10 -1 A 10 0 10 -5 10 -4 10 -3 A 10 -2 I I C C 3 2011-10-06

BCR533 Total power dissipation P = ƒ(T ) Permissible Pulse Load R = ƒ(t ) tot S thJS p 10 3 400 K/W mW 300 10 2 S ot hJ Pt 250 Rt 200 10 1 0.5 0.2 150 0.1 0.05 0.02 100 10 0 0.01 0.005 D = 0 50 00 20 40 60 80 100 120 °C 150 10 -11 0 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 T t S p Permissible Pulse Load P /P = ƒ(t ) totmax totDC p 10 4 - C D ot Pt 10 3 /ax D = 0 m 0.005 ot Pt 0.01 0.02 10 2 0.05 0.1 0.2 0.5 10 1 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 t p 4 2011-10-06

Package SOT23 BCR533 Package Outline N. 1±0.1 MI 2.9±0.1 B 15 0.1 MAX. 0. 0.4-+00..0151) 1 3 2 C 2.4±0.15 10˚ MAX. 0.08...0.10˚ MAX.15 A1.3±0.1 0.95 0...8˚ 1.9 0.25M B C 0.2M A 1) Lead width can be 0.6 max. in dambar area Foot Print 0.8 9 0. 3 1. 0.8 1.2 0.9 Marking Layout (Example) Manufacturer EH s 2005, June Date code (YM) Pin 1 BCW66 Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 4 0.9 0.2 2.132.65 8 Pin 1 3.15 1.15 5 2011-10-06

BCR533 Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany  2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (<www.infineon.com>). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 6 2011-10-06

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